NVB6411ANT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Radiation Hardening :

No

Factory Lead Time :

25 Weeks

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Number of Pins :

3

Reference Standard :

AEC-Q101

Halogen Free :

Halogen Free

Lead Free :

Lead Free

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

157 ns

DS Breakdown Voltage-Min :

100V

Mounting Type :

Surface Mount

Turn-Off Delay Time :

107 ns

Published :

2009

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

77A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

285A

Drain-source On Resistance-Max :

0.014Ohm

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Transistor Element Material :

SILICON

Pin Count :

3

Drain to Source Voltage (Vdss) :

100V

Terminal Form :

Gull wing

ECCN Code :

EAR99

JESD-609 Code :

e3

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

14m Ω @ 72A, 10V

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

77A

Avalanche Energy Rating (Eas) :

470 mJ

Vgs (Max) :

±20V

Rise Time :

144ns

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Turn On Delay Time :

16 ns

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Power Dissipation-Max :

217W Tc

Input Capacitance (Ciss) (Max) @ Vds :

3700pF @ 25V