NVB6411ANT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

77A

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Turn On Delay Time :

16 ns

Drain-source On Resistance-Max :

0.014Ohm

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

157 ns

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

285A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

77A Tc

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 days ago)

Power Dissipation-Max :

217W Tc

Published :

2009

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

FET Type :

N-Channel

Transistor Element Material :

SILICON

Halogen Free :

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds :

3700pF @ 25V

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Rise Time :

144ns

Lead Free :

Lead Free

Reference Standard :

AEC-Q101

Terminal Form :

Gull wing

Factory Lead Time :

25 Weeks

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Avalanche Energy Rating (Eas) :

470 mJ

Rds On (Max) @ Id, Vgs :

14m Ω @ 72A, 10V

Number of Terminations :

2

Element Configuration :

Single

Turn-Off Delay Time :

107 ns

Drain to Source Voltage (Vdss) :

100V

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Number of Pins :

3

Pbfree Code :

yes

Surface Mount :

yes

DS Breakdown Voltage-Min :

100V