NVB6411ANT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Radiation Hardening :

No

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 days ago)

Power Dissipation-Max :

217W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

3700pF @ 25V

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Pin Count :

3

Rise Time :

144ns

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

470 mJ

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Lead Free :

Lead Free

Fall Time (Typ) :

157 ns

Rds On (Max) @ Id, Vgs :

14m Ω @ 72A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2009

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

16 ns

Current - Continuous Drain (Id) @ 25°C :

77A Tc

Reference Standard :

AEC-Q101

Halogen Free :

Halogen Free

Mounting Type :

Surface Mount

Number of Elements :

1

Turn-Off Delay Time :

107 ns

Drain to Source Voltage (Vdss) :

100V

Continuous Drain Current (ID) :

77A

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

DS Breakdown Voltage-Min :

100V

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

285A

Factory Lead Time :

25 Weeks

Vgs (Max) :

±20V

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.014Ohm