NVB6411ANT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

77A

Pbfree Code :

yes

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 days ago)

Drain-source On Resistance-Max :

0.014Ohm

Case Connection :

DRAIN

Vgs (Max) :

±20V

Pin Count :

3

Transistor Element Material :

SILICON

Rise Time :

144ns

ECCN Code :

EAR99

JESD-609 Code :

e3

Published :

2009

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

107 ns

Fall Time (Typ) :

157 ns

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Avalanche Energy Rating (Eas) :

470 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Element Configuration :

Single

Halogen Free :

Halogen Free

Terminal Finish :

Tin (Sn)

Pulsed Drain Current-Max (IDM) :

285A

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

77A Tc

Input Capacitance (Ciss) (Max) @ Vds :

3700pF @ 25V

Radiation Hardening :

No

Surface Mount :

yes

Reference Standard :

AEC-Q101

Factory Lead Time :

25 Weeks

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

14m Ω @ 72A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

DS Breakdown Voltage-Min :

100V

Power Dissipation-Max :

217W Tc

Packaging :

Tape and Reel (TR)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Turn On Delay Time :

16 ns

Drain to Source Voltage (Vdss) :

100V

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1