NUS2401SNT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Current - Collector Cutoff (Max) :

500nA

Voltage - Rated DC :

50V

Emitter Base Voltage (VEBO) :

7V

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

3

ECCN Code :

EAR99

Max Power Dissipation :

350mW

Max Breakdown Voltage :

50V

Package / Case :

SC-74, SOT-457

Power Dissipation :

350mW

Current Rating :

200mA

Terminal Position :

Dual

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Base Part Number :

NUS2401

Surface Mount :

yes

Collector Emitter Voltage (VCEO) :

50V

Terminal Form :

Gull wing

Additional Feature :

BUILT IN BIAS RESISTORS

Width :

1.7mm

DC Current Gain-Min (hFE) :

150

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA / 250mV @ 300μA, 10mA

Transistor Application :

SWITCHING

Transistor Type :

2 NPN, 1 PNP - Pre-Biased

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Pin Count :

6

Lead Free :

Lead Free

Polarity :

PNP

Collector Emitter Breakdown Voltage :

50V

Published :

2006

Number of Pins :

6

Collector Base Voltage (VCBO) :

60V

Min Operating Temperature :

-55°C

Max Collector Current :

200mA

Resistor - Base (R1) :

175 Ω, 10k Ω

Number of Terminations :

6

Halogen Free :

Halogen Free

hFE Min :

150

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

COMPLEX

Max Operating Temperature :

150°C

Length :

3.1mm

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

250mV

Height :

1mm

Factory Lead Time :

13 Weeks

Resistor - Emitter Base (R2) :

175 Ω, 10k Ω

Continuous Collector Current :

200mA

Pbfree Code :

yes