NTS4409NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Drain to Source Breakdown Voltage :

25V

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Turn On Delay Time :

5 ns

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 10V

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 4.5V

Terminal Position :

Dual

Number of Pins :

3

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Power Dissipation-Max :

280mW Tj

Rise Time :

8.2ns

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

11 Weeks

Power Dissipation :

280mW

Element Configuration :

Single

Fall Time (Typ) :

8.2 ns

Length :

2.2mm

Width :

1.35mm

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Number of Terminations :

3

Transistor Element Material :

SILICON

Turn-Off Delay Time :

23 ns

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Published :

2006

Threshold Voltage :

650mV

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±8V

Contact Plating :

Tin

Voltage - Rated DC :

25V

Current - Continuous Drain (Id) @ 25°C :

700mA Ta

Rds On (Max) @ Id, Vgs :

350m Ω @ 600mA, 4.5V

Current Rating :

700mA

Transistor Application :

SWITCHING

Package / Case :

SC-70, SOT-323

Terminal Form :

Gull wing

Pbfree Code :

yes

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

0.7A

Radiation Hardening :

No

Continuous Drain Current (ID) :

750mA

Height :

900μm

Packaging :

Tape and Reel (TR)

Resistance :

249mOhm