NTS4101PT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Continuous Drain Current (ID) :

1.37A

Number of Pins :

3

Power Dissipation-Max :

329mW Ta

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

8V

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

840pF @ 20V

Peak Reflow Temperature (Cel) :

260

Width :

1.35mm

Voltage - Rated DC :

-20V

Vgs (Max) :

±8V

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Drain to Source Breakdown Voltage :

-20V

Published :

1998

Number of Elements :

1

Transistor Element Material :

SILICON

Power Dissipation :

329mW

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Current Rating :

-1.37A

Pin Count :

3

Turn-Off Delay Time :

26 ns

Operating Mode :

ENHANCEMENT MODE

Height :

900μm

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Factory Lead Time :

14 Weeks

Feedback Cap-Max (Crss) :

85 pF

Terminal Position :

Dual

Lead Free :

Lead Free

Threshold Voltage :

-640mV

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 4.5V

Resistance :

83mOhm

Package / Case :

SC-70, SOT-323

Length :

2.2mm

Current - Continuous Drain (Id) @ 25°C :

1.37A Ta

Turn On Delay Time :

6.2 ns

Transistor Application :

SWITCHING

Fall Time (Typ) :

14.9 ns

Drain to Source Voltage (Vdss) :

20V

RoHS Status :

ROHS3 Compliant

Rise Time :

14.9ns

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

120m Ω @ 1A, 4.5V

Contact Plating :

Tin