NTS4173PT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Power Dissipation-Max :

290mW Ta

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Element Configuration :

Single

Transistor Element Material :

SILICON

Height :

900μm

Rds On (Max) @ Id, Vgs :

150m Ω @ 1.2A, 10V

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Pin Count :

3

Length :

2.2mm

Drain to Source Breakdown Voltage :

-30V

Rise Time :

6.7ns

Published :

2006

Turn On Delay Time :

7.7 ns

Number of Terminations :

3

Continuous Drain Current (ID) :

-1.2A

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

10.1nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

12V

Vgs (Max) :

±12V

Radiation Hardening :

No

Nominal Vgs :

-1.15 V

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Fall Time (Typ) :

7.1 ns

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Threshold Voltage :

-1.15V

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

1.2A Ta

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Terminal Form :

Gull wing

Width :

1.35mm

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

30V

Contact Plating :

Tin

Number of Elements :

1

Factory Lead Time :

8 Weeks

Packaging :

Tape and Reel (TR)

Power Dissipation :

350mW

Lead Free :

Lead Free

Turn-Off Delay Time :

19.9 ns

Input Capacitance (Ciss) (Max) @ Vds :

430pF @ 15V

Package / Case :

SC-70, SOT-323

Vgs(th) (Max) @ Id :

1.5V @ 250µA

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant