NTS4173PT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

8 Weeks

Package / Case :

SC-70, SOT-323

Drain to Source Breakdown Voltage :

-30V

Input Capacitance (Ciss) (Max) @ Vds :

430pF @ 15V

Width :

1.35mm

JESD-609 Code :

e3

Number of Pins :

3

Drain to Source Voltage (Vdss) :

30V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Gate Charge (Qg) (Max) @ Vgs :

10.1nC @ 10V

Vgs (Max) :

±12V

Turn-Off Delay Time :

19.9 ns

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

150m Ω @ 1.2A, 10V

Number of Terminations :

3

Vgs(th) (Max) @ Id :

1.5V @ 250µA

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Element Configuration :

Single

FET Type :

P-Channel

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

12V

Published :

2006

Rise Time :

6.7ns

Power Dissipation-Max :

290mW Ta

Radiation Hardening :

No

Pin Count :

3

Length :

2.2mm

Terminal Form :

Gull wing

Power Dissipation :

350mW

Continuous Drain Current (ID) :

-1.2A

Pbfree Code :

yes

Mounting Type :

Surface Mount

Surface Mount :

yes

Number of Elements :

1

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Height :

900μm

Current - Continuous Drain (Id) @ 25°C :

1.2A Ta

Turn On Delay Time :

7.7 ns

Lead Free :

Lead Free

Threshold Voltage :

-1.15V

Terminal Position :

Dual

Contact Plating :

Tin

Nominal Vgs :

-1.15 V

Fall Time (Typ) :

7.1 ns