NTR1P02T1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Cut Tape (CT)

Number of Pins :

3

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

148mOhm

Current - Continuous Drain (Id) @ 25°C :

1A Ta

Pin Count :

3

Factory Lead Time :

15 Weeks

Power Dissipation :

400mW

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

1A

Pbfree Code :

yes

Published :

2005

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

3

Lead Free :

Lead Free

Width :

1.3mm

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

-20V

Length :

2.9mm

Element Configuration :

Single

Height :

940μm

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Threshold Voltage :

-1.9V

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Voltage - Rated DC :

-20V

Rise Time :

9ns

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 5V

FET Type :

P-Channel

Turn-Off Delay Time :

9 ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

9 ns

Turn On Delay Time :

7 ns

Nominal Vgs :

-1.9 V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

165pF @ 5V

JESD-609 Code :

e3

Power Dissipation-Max :

400mW Ta

Current Rating :

-1A

Number of Elements :

1

Continuous Drain Current (ID) :

1A

Surface Mount :

yes

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

180m Ω @ 1.5A, 10V