NTR1P02T1

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

9 ns

Nominal Vgs :

-1.9 V

Threshold Voltage :

-1.9V

Lead Free :

Lead Free

Published :

2005

Drain to Source Breakdown Voltage :

-20V

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Height :

940μm

Rds On (Max) @ Id, Vgs :

180m Ω @ 1.5A, 10V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current - Continuous Drain (Id) @ 25°C :

1A Ta

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

1A

Voltage - Rated DC :

-20V

Rise Time :

9ns

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Power Dissipation-Max :

400mW Ta

Resistance :

148mOhm

Factory Lead Time :

15 Weeks

Width :

1.3mm

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

7 ns

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Packaging :

Cut Tape (CT)

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Contact Plating :

Tin

Power Dissipation :

400mW

Current Rating :

-1A

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Length :

2.9mm

REACH SVHC :

No SVHC

Pbfree Code :

yes

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

165pF @ 5V

Surface Mount :

yes

Turn-Off Delay Time :

9 ns

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Number of Elements :

1

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

1A

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

JESD-609 Code :

e3

Vgs (Max) :

±20V

Pin Count :

3