NTR1P02LT1

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

-20V

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

400mW Ta

Number of Elements :

1

REACH SVHC :

No SVHC

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1.25V @ 250μA

Power Dissipation :

400mW

FET Type :

P-Channel

Transistor Application :

SWITCHING

Terminal Position :

Dual

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

40

Turn On Delay Time :

7 ns

Threshold Voltage :

-1V

Vgs (Max) :

±12V

Element Configuration :

Single

JESD-609 Code :

e3

Turn-Off Delay Time :

18 ns

Width :

1.3mm

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

1.3A Ta

ECCN Code :

EAR99

Package / Case :

TO-236-3, SC-59, SOT-23-3

Published :

2004

Lead Free :

Lead Free

Rise Time :

15ns

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

-20V

Number of Terminations :

3

Factory Lead Time :

14 Weeks

Resistance :

220mOhm

Fall Time (Typ) :

15 ns

Gate to Source Voltage (Vgs) :

12V

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

225pF @ 5V

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Rds On (Max) @ Id, Vgs :

220m Ω @ 750mA, 4.5V

Height :

940μm

Packaging :

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 4V

Length :

2.9mm

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

1.3A

Current Rating :

-1.3A

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin