NTP5864NG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Radiation Hardening :

No

Turn On Delay Time :

10 ns

JESD-609 Code :

e3

FET Type :

N-Channel

Rise Time :

6.4ns

Mounting Type :

Through Hole

Published :

2011

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

252A

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

60V

Number of Pins :

3

Number of Elements :

1

ECCN Code :

EAR99

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Transistor Element Material :

SILICON

Power Dissipation-Max :

107W Tc

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

JEDEC-95 Code :

TO-220AB

Continuous Drain Current (ID) :

63A

Fall Time (Typ) :

4.6 ns

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

80 mJ

Current - Continuous Drain (Id) @ 25°C :

63A Tc

Pbfree Code :

yes

Factory Lead Time :

20 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Width :

15.75mm

Package / Case :

TO-220-3

Packaging :

Tube

Height :

4.82mm

Length :

10.28mm

Rds On (Max) @ Id, Vgs :

12.4m Ω @ 20A, 10V

Power Dissipation :

107W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1680pF @ 25V

Turn-Off Delay Time :

18 ns

Pin Count :

3