NTP52N10G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

156A

Pbfree Code :

yes

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

30m Ω @ 26A, 10V

Gate Charge (Qg) (Max) @ Vgs :

135nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Number of Terminations :

3

Pin Count :

3

Power Dissipation :

214W

Drain to Source Breakdown Voltage :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Fall Time (Typ) :

100 ns

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

60A Ta

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

3150pF @ 25V

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

60A

Transistor Element Material :

SILICON

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Transistor Application :

SWITCHING

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

214W Tc

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2006

Package / Case :

TO-220-3

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

800 mJ

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

74 ns

HTS Code :

8541.29.00.95

Case Connection :

DRAIN

Element Configuration :

Single

Voltage - Rated DC :

100V

Current Rating :

52A

Rise Time :

95ns

Terminal Finish :

Tin (Sn)

JEDEC-95 Code :

TO-220AB

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant