NTP52N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Packaging :

Tube

Mounting Type :

Through Hole

Power Dissipation-Max :

214W Tc

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

240

Current - Continuous Drain (Id) @ 25°C :

60A Ta

Power Dissipation :

214W

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

30m Ω @ 26A, 10V

Rise Time :

95ns

HTS Code :

8541.29.00.95

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Contains Lead

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Package / Case :

TO-220-3

Drain to Source Breakdown Voltage :

100V

Input Capacitance (Ciss) (Max) @ Vds :

3150pF @ 25V

Turn-Off Delay Time :

74 ns

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Terminal Finish :

Tin/Lead (Sn80Pb20)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e0

Fall Time (Typ) :

100 ns

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

RoHS Status :

Non-RoHS Compliant

Current Rating :

52A

Published :

2006

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Avalanche Energy Rating (Eas) :

800 mJ

Gate Charge (Qg) (Max) @ Vgs :

135nC @ 10V

Voltage - Rated DC :

100V

Continuous Drain Current (ID) :

60A

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.03Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

156A