NTP5863NG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

150W

Avalanche Energy Rating (Eas) :

157 mJ

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.0078Ohm

Input Capacitance (Ciss) (Max) @ Vds :

3200pF @ 25V

Element Configuration :

Single

Continuous Drain Current (ID) :

97A

Mounting Type :

Through Hole

Radiation Hardening :

No

Turn On Delay Time :

10 ns

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Drain to Source Breakdown Voltage :

60V

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

9 ns

Number of Elements :

1

Surface Mount :

No

Turn-Off Delay Time :

25 ns

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

97A Tc

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Published :

2001

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

150W Tc

Lead Free :

Lead Free

JESD-609 Code :

e3

Rise Time :

34ns

Rds On (Max) @ Id, Vgs :

7.8m Ω @ 20A, 10V

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Case Connection :

DRAIN

Packaging :

Tube

JEDEC-95 Code :

TO-220AB