NTP5862NG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

205 mJ

Drain Current-Max (Abs) (ID) :

50A

Drain to Source Breakdown Voltage :

60V

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

22 Weeks

Terminal Finish :

Tin (Sn)

Turn-Off Delay Time :

35 ns

Drain-source On Resistance-Max :

0.0057Ohm

Number of Elements :

1

Reach Compliance Code :

not_compliant

Pbfree Code :

yes

Pin Count :

3

Packaging :

Tube

Published :

2013

JESD-609 Code :

e3

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 45A, 10V

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

98A

Package / Case :

TO-220-3

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Number of Pins :

3

Rise Time :

70ns

Surface Mount :

No

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

82nC @ 10V

FET Type :

N-Channel

Fall Time (Typ) :

60 ns

Element Configuration :

Single

Max Power Dissipation :

115W

Current - Continuous Drain (Id) @ 25°C :

98A Tc

Power Dissipation :

115W