NTP5860NG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

60V

Rise Time :

117ns

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

27 ns

Surface Mount :

No

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

3m Ω @ 75A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

660A

Turn-Off Delay Time :

66 ns

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Continuous Drain Current (ID) :

220A

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Factory Lead Time :

4 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

10760pF @ 25V

JESD-609 Code :

e3

Radiation Hardening :

No

Fall Time (Typ) :

150 ns

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Lead Free :

Lead Free

JEDEC-95 Code :

TO-220AB

Published :

2012

Element Configuration :

Single

Vgs (Max) :

±20V

Power Dissipation :

283W

Power Dissipation-Max :

283W Tc

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

220A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole