NTP5411NG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn-Off Delay Time :

116 ns

Power Dissipation-Max :

166W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Avalanche Energy Rating (Eas) :

280 mJ

JESD-609 Code :

e3

Pin Count :

3

Lead Free :

Lead Free

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 4 days ago)

Power Dissipation :

166W

Continuous Drain Current (ID) :

80A

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Package / Case :

TO-220-3

Fall Time (Typ) :

113 ns

Transistor Element Material :

SILICON

Packaging :

Tube

Nominal Vgs :

3.2 V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Number of Elements :

1

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

FET Type :

N-Channel

Rise Time :

122ns

Pbfree Code :

yes

Published :

2008

Drain to Source Breakdown Voltage :

60V

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

10m Ω @ 40A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Number of Pins :

3

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED