NTP2955G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Packaging :

Tube

Case Connection :

DRAIN

Turn-Off Delay Time :

27 ns

Length :

10.28mm

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Rise Time :

41ns

Pulsed Drain Current-Max (IDM) :

42A

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Power Dissipation-Max :

2.4W Ta 62.5W Tc

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

40

Rds On (Max) @ Id, Vgs :

196m Ω @ 12A, 10V

Pin Count :

3

Radiation Hardening :

No

Pbfree Code :

yes

Number of Elements :

1

Mounting Type :

Through Hole

Turn On Delay Time :

10 ns

Operating Temperature :

-55°C~175°C TJ

FET Type :

P-Channel

Threshold Voltage :

-4V

Drain Current-Max (Abs) (ID) :

2.4A

Resistance :

156mOhm

Current Rating :

-12A

Drain to Source Voltage (Vdss) :

60V

Transistor Element Material :

SILICON

Weight :

4.535924g

Drain to Source Breakdown Voltage :

-60V

Published :

2004

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

2.4A Ta

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

9 Weeks

Continuous Drain Current (ID) :

12A

Number of Pins :

3

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

45 ns

JEDEC-95 Code :

TO-220AB

Lead Free :

Lead Free

Voltage - Rated DC :

-60V

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

20V

Height :

9.28mm

JESD-609 Code :

e3

Power Dissipation :

2.4W

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

4V @ 250µA

Width :

4.82mm