NTP27N06
- Mfr.Part #
- NTP27N06
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 27A TO220AB
- Stock
- 38,499
- In Stock :
- 38,499
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- RoHS Status :
- Non-RoHS Compliant
- Peak Reflow Temperature (Cel) :
- 240
- Continuous Drain Current (ID) :
- 27A
- Case Connection :
- DRAIN
- Reach Compliance Code :
- not_compliant
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 27A Ta
- Power Dissipation :
- 88.2W
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Published :
- 2009
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e0
- Lead Free :
- Contains Lead
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Gate to Source Voltage (Vgs) :
- 20V
- Drain-source On Resistance-Max :
- 0.046Ohm
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-220AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 1015pF @ 25V
- Avalanche Energy Rating (Eas) :
- 109 mJ
- Drain to Source Breakdown Voltage :
- 60V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Rise Time :
- 62.7ns
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 70.4 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 80A
- Rds On (Max) @ Id, Vgs :
- 46m Ω @ 13.5A, 10V
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 26.6 ns
- Package / Case :
- TO-220-3
- HTS Code :
- 8541.29.00.95
- Power Dissipation-Max :
- 88.2W Tc
- JESD-30 Code :
- R-PSFM-T3
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Voltage - Rated DC :
- 60V
- Current Rating :
- 27A
- Datasheets
- NTP27N06

N-Channel Tube 46m Ω @ 13.5A, 10V ±20V 1015pF @ 25V 30nC @ 10V TO-220-3
NTP27N06 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 109 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1015pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 27A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 26.6 ns.Peak drain current is 80A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
NTP27N06 Features
the avalanche energy rating (Eas) is 109 mJ
a continuous drain current (ID) of 27A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 26.6 ns
based on its rated peak drain current 80A.
NTP27N06 Applications
There are a lot of ON Semiconductor
NTP27N06 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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