NTP22N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

60V

Transistor Element Material :

SILICON

JESD-609 Code :

e0

Drain Current-Max (Abs) (ID) :

22A

JEDEC-95 Code :

TO-220AB

Pulsed Drain Current-Max (IDM) :

66A

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Pin Count :

3

FET Type :

N-Channel

Number of Elements :

1

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

60m Ω @ 11A, 10V

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

Terminal Finish :

TIN LEAD

Avalanche Energy Rating (Eas) :

72 mJ

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Qualification Status :

COMMERCIAL

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Drain-source On Resistance-Max :

0.06Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

60W Tj

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

22A Ta

Number of Terminations :

3

DS Breakdown Voltage-Min :

60V

RoHS Status :

Non-RoHS Compliant