NTMKE4892NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

NO LEAD

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

148A

Number of Terminations :

3

Published :

2011

Pulsed Drain Current-Max (IDM) :

210A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-XBCC-N3

Number of Pins :

5

Pin Count :

3

DS Breakdown Voltage-Min :

30V

Power Dissipation-Max :

2.8W Ta 89W Tc

Drain to Source Voltage (Vdss) :

30V

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Transistor Application :

SWITCHING

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

26A

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

26A Ta 148A Tc

ECCN Code :

EAR99

Terminal Position :

BOTTOM

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 24A, 10V

Mounting Type :

Surface Mount

Mount :

Surface Mount

Number of Elements :

1

Package / Case :

5-ICEPAK

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Drain-source On Resistance-Max :

0.0026Ohm

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

4270pF @ 15V

Avalanche Energy Rating (Eas) :

290 mJ

Packaging :

Tape and Reel (TR)