NTMKB4895NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Number of Terminations :

2

Power Dissipation-Max :

2.2W Ta 42W Tc

Package / Case :

4-ICEPAK

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

30V

FET Type :

N-Channel

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Avalanche Energy Rating (Eas) :

80 mJ

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.006Ohm

Pin Count :

2

Drain Current-Max (Abs) (ID) :

15A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Terminal Position :

BOTTOM

Published :

2011

Input Capacitance (Ciss) (Max) @ Vds :

1644pF @ 15V

Number of Pins :

4

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

6m Ω @ 15A, 10V

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

66A

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

30V

Pulsed Drain Current-Max (IDM) :

120A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

Mount :

Surface Mount

JESD-30 Code :

R-XBCC-N2

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

NO LEAD

Current - Continuous Drain (Id) @ 25°C :

15A Ta 66A Tc

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V