NTMKE4891NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

184 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

26.7A

Case Connection :

DRAIN

Power Dissipation-Max :

2.8W Ta 89W Tc

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Drain-source On Resistance-Max :

0.0026Ohm

Input Capacitance (Ciss) (Max) @ Vds :

4360pF @ 15V

Continuous Drain Current (ID) :

151A

JESD-30 Code :

R-XBCC-N3

Terminal Position :

BOTTOM

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

RoHS Compliant

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Transistor Application :

SWITCHING

Published :

2011

Packaging :

Tape and Reel (TR)

Terminal Form :

NO LEAD

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

26.7A Ta 151A Tc

Pin Count :

3

Number of Pins :

5

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 29A, 10V

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

5-ICEPAK

Pulsed Drain Current-Max (IDM) :

210A