NTE133

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - JFETs

Continuous Drain Current (ID) :

500 µA

JESD-30 Code :

O-PBCY-W3

Reach Compliance Code :

Unknown

Drain to Source Voltage (Vdss) :

25 V

Max Operating Temperature :

150 °C

Package / Case :

TO-106-3 Domed

ECCN Code :

EAR99

Power Dissipation-Max (Abs) :

0.3 W

Transistor Application :

AMPLIFIER

Gate to Source Voltage (Vgs) :

-25 V

FET Technology :

JUNCTION

Package Shape :

Round

Max Power Dissipation :

300 mW

Drain to Source Breakdown Voltage :

-6.5 V

Package :

Bag

REACH SVHC :

Unknown

JEDEC-95 Code :

TO-106

Number of Pins :

3

Subcategory :

Other Transistors

Supplier Device Package :

TO-106

RoHS :

Compliant

Current - Drain (Idss) @ Vds (Vgs=0) :

500 μA @ 15 V

Min Operating Temperature :

-55 °C

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Mounting Type :

Through Hole

FET Type :

N-Channel

Operating Temperature :

-55°C ~ 150°C (TJ)

Voltage - Cutoff (VGS off) @ Id :

6.5 V @ 1 nA

Terminal Form :

Wire

Transistor Element Material :

SILICON

Breakdown Voltage :

-25 V

Pin Count :

3

Product Status :

Active

Length :

88.9 mm

Element Configuration :

Single

DS Breakdown Voltage-Min :

25 V

Surface Mount :

No

Qualification Status :

Not Qualified

Width :

5.2832 mm

Weight :

4.535924 g

Number of Terminals :

3

Power Dissipation :

300 mW

Height :

4.572 mm

HTS Code :

8541.21.00.95

Series :

-

Feedback Cap-Max (Crss) :

2 pF

Terminal Position :

BOTTOM

Input Capacitance (Ciss) (Max) @ Vds :

-

Voltage - Breakdown (V(BR)GSS) :

25 V

Power - Max :

300 mW

Operating Mode :

Depletion Mode

Mount :

Through Hole

Configuration :

Single

Manufacturer :

NTE Electronics