NTD6600NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

40

Rds On (Max) @ Id, Vgs :

146m Ω @ 6A, 5V

Terminal Form :

Gull wing

Power Dissipation :

56.6W

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Published :

2007

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

44A

Voltage - Rated DC :

100V

Rise Time :

75ns

Element Configuration :

Single

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Current Rating :

12A

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

5V

Drain to Source Breakdown Voltage :

100V

Avalanche Energy Rating (Eas) :

72 mJ

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

ECCN Code :

EAR99

FET Type :

N-Channel

Transistor Application :

SWITCHING

Pbfree Code :

yes

JESD-609 Code :

e3

Fall Time (Typ) :

50 ns

Lead Free :

Lead Free

Continuous Drain Current (ID) :

12A

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

1.28W Ta 56.6W Tc

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Number of Pins :

3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

26 ns

Vgs(th) (Max) @ Id :

2V @ 250μA

Turn On Delay Time :

10.5 ns