NTD60N03T4
- Mfr.Part #
- NTD60N03T4
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 28V 60A DPAK
- Stock
- 9,834
- In Stock :
- 9,834
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 2
- RoHS Status :
- Non-RoHS Compliant
- Number of Elements :
- 1
- Terminal Finish :
- TIN LEAD
- Qualification Status :
- COMMERCIAL
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e0
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Unknown
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pulsed Drain Current-Max (IDM) :
- 120A
- Terminal Position :
- Single
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 30A, 10V
- Drain to Source Voltage (Vdss) :
- 28V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Terminal Form :
- Gull wing
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drain-source On Resistance-Max :
- 0.0075Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Avalanche Energy Rating (Eas) :
- 733 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Transistor Application :
- SWITCHING
- Surface Mount :
- yes
- Pin Count :
- 3
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.15pF @ 24V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- Pbfree Code :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 4.5V
- Power Dissipation-Max :
- 75W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 60A
- DS Breakdown Voltage-Min :
- 28V
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- Packaging :
- Tape and Reel (TR)
- Datasheets
- NTD60N03T4

N-Channel Tape & Reel (TR) 7.5m Ω @ 30A, 10V ±20V 2.15pF @ 24V 30nC @ 4.5V 28V TO-252-3, DPak (2 Leads + Tab), SC-63
NTD60N03T4 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 733 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2.15pF @ 24V.There is no drain current on this device since the maximum continuous current it can conduct is 60A.There is a peak drain current of 120A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 28V, it should remain above the 28V level.The transistor must receive a 28V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
NTD60N03T4 Features
the avalanche energy rating (Eas) is 733 mJ
based on its rated peak drain current 120A.
a 28V drain to source voltage (Vdss)
NTD60N03T4 Applications
There are a lot of Rochester Electronics, LLC
NTD60N03T4 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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