NTD6415ANLT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Published :

2010

Drain to Source Breakdown Voltage :

100V

Pin Count :

4

Rise Time :

91ns

Terminal Position :

Dual

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

4

Input Capacitance (Ciss) (Max) @ Vds :

1024pF @ 25V

Vgs(th) (Max) @ Id :

2V @ 250μA

Height :

2.38mm

Drain-source On Resistance-Max :

0.056Ohm

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

34 Weeks

Turn On Delay Time :

11 ns

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

52m Ω @ 10A, 10V

Pulsed Drain Current-Max (IDM) :

80A

Surface Mount :

yes

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Width :

6.22mm

JESD-30 Code :

R-PDSO-G2

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Radiation Hardening :

No

Power Dissipation-Max :

83W Tc

Power Dissipation :

83W

Fall Time (Typ) :

71 ns

Mounting Type :

Surface Mount

Turn-Off Delay Time :

40 ns

ECCN Code :

EAR99

Length :

6.73mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Continuous Drain Current (ID) :

23A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Avalanche Energy Rating (Eas) :

79 mJ