NTD6415ANLT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

2.38mm

Fall Time (Typ) :

71 ns

Element Configuration :

Single

Power Dissipation-Max :

83W Tc

Pulsed Drain Current-Max (IDM) :

80A

RoHS Status :

ROHS3 Compliant

Power Dissipation :

83W

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Rds On (Max) @ Id, Vgs :

52m Ω @ 10A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Turn On Delay Time :

11 ns

Rise Time :

91ns

Pin Count :

4

Vgs(th) (Max) @ Id :

2V @ 250μA

Case Connection :

DRAIN

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-G2

Number of Pins :

4

Published :

2010

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

23A

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

34 Weeks

Turn-Off Delay Time :

40 ns

Drain to Source Breakdown Voltage :

100V

Vgs (Max) :

±20V

Width :

6.22mm

ECCN Code :

EAR99

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

79 mJ

Surface Mount :

yes

Transistor Application :

SWITCHING

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Length :

6.73mm

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.056Ohm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Input Capacitance (Ciss) (Max) @ Vds :

1024pF @ 25V