NTD6415ANLT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Pin Count :

4

JESD-30 Code :

R-PDSO-G2

Pulsed Drain Current-Max (IDM) :

80A

Number of Pins :

4

Power Dissipation :

83W

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Published :

2010

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

52m Ω @ 10A, 10V

Length :

6.73mm

Rise Time :

91ns

Drain to Source Breakdown Voltage :

100V

Lead Free :

Lead Free

Turn On Delay Time :

11 ns

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Avalanche Energy Rating (Eas) :

79 mJ

Terminal Position :

Dual

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Fall Time (Typ) :

71 ns

Vgs(th) (Max) @ Id :

2V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Pbfree Code :

yes

Surface Mount :

yes

Continuous Drain Current (ID) :

23A

Height :

2.38mm

ECCN Code :

EAR99

Number of Terminations :

2

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Input Capacitance (Ciss) (Max) @ Vds :

1024pF @ 25V

Width :

6.22mm

Mounting Type :

Surface Mount

Power Dissipation-Max :

83W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.056Ohm

Turn-Off Delay Time :

40 ns

FET Type :

N-Channel

JESD-609 Code :

e3

Factory Lead Time :

34 Weeks