NTD6414AN-1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Number of Elements :

1

Terminal Position :

Single

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

37m Ω @ 32A, 10V

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSIP-T3

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

100V

Terminal Finish :

MATTE TIN

Pulsed Drain Current-Max (IDM) :

117A

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Qualification Status :

COMMERCIAL

DS Breakdown Voltage-Min :

100V

Drain-source On Resistance-Max :

0.037Ohm

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1.45pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

154 mJ

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

32A Tc

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

100W Tc

Drain Current-Max (Abs) (ID) :

32A

Pbfree Code :

No