NTD6600NT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

56.6W

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e0

Rds On (Max) @ Id, Vgs :

146m Ω @ 6A, 5V

Lead Free :

Contains Lead

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Pulsed Drain Current-Max (IDM) :

44A

Terminal Finish :

Tin/Lead (Sn/Pb)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current Rating :

12A

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

5V

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

100V

Transistor Element Material :

SILICON

Published :

2007

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Avalanche Energy Rating (Eas) :

72 mJ

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

ECCN Code :

EAR99

Number of Elements :

1

FET Type :

N-Channel

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

100V

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Number of Terminations :

2

Mounting Type :

Surface Mount

Power Dissipation-Max :

1.28W Ta 56.6W Tc

JESD-30 Code :

R-PSSO-G2

Pin Count :

3

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

12A

Drain-source On Resistance-Max :

0.146Ohm

Peak Reflow Temperature (Cel) :

235

Rise Time :

75ns

Mount :

Surface Mount

Fall Time (Typ) :

50 ns

Turn-Off Delay Time :

26 ns

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Qualification Status :

Not Qualified