NTD65N03RT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

COMMERCIAL

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Avalanche Energy Rating (Eas) :

71.7 mJ

Vgs(th) (Max) @ Id :

2V @ 250μA

Rds On (Max) @ Id, Vgs :

8.4m Ω @ 30A, 10V

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0146Ohm

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

DS Breakdown Voltage-Min :

25V

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

MATTE TIN

Drain Current-Max (Abs) (ID) :

32A

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

130A

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 5V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

9.5A Ta 32A Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Terminal Position :

Single

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

25V

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

2

Case Connection :

DRAIN

Surface Mount :

yes

Pbfree Code :

yes

Power Dissipation-Max :

1.3W Ta 50W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

1.4pF @ 20V

Operating Temperature :

-55°C~175°C TJ