NTD65N03RT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

50W

Vgs(th) (Max) @ Id :

2V @ 250μA

Element Configuration :

Single

Drain to Source Breakdown Voltage :

25V

Rds On (Max) @ Id, Vgs :

8.4m Ω @ 30A, 10V

Published :

2006

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

235

JESD-609 Code :

e0

Pulsed Drain Current-Max (IDM) :

130A

Continuous Drain Current (ID) :

32A

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Power Dissipation-Max :

1.3W Ta 50W Tc

Qualification Status :

Not Qualified

Current Rating :

65A

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Mount :

Surface Mount

Voltage - Rated DC :

25V

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 5V

Turn-Off Delay Time :

20.3 ns

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Terminal Finish :

Tin/Lead (Sn/Pb)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

71.7 mJ

Drain-source On Resistance-Max :

0.0146Ohm

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

9.5A Ta 32A Tc

RoHS Status :

Non-RoHS Compliant

Terminal Form :

Gull wing

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 20V

FET Type :

N-Channel

Lead Free :

Contains Lead