NTD65N03RG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

1.3W Ta 50W Tc

DS Breakdown Voltage-Min :

25V

Avalanche Energy Rating (Eas) :

71.7 mJ

Terminal Finish :

MATTE TIN

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 5V

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

9.5A Ta 32A Tc

JESD-30 Code :

R-PSSO-G2

Pin Count :

3

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

130A

Drain-source On Resistance-Max :

0.0146Ohm

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain to Source Voltage (Vdss) :

25V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

32A

Qualification Status :

COMMERCIAL

Number of Elements :

1

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

8.4m Ω @ 30A, 10V

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1.4pF @ 20V

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

yes

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant