NTD65N03R

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Mfr.Part #
NTD65N03R
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 25V 9.5A/32A DPAK
Stock
3,370
In Stock :
3,370

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Finish :
TIN LEAD
Operating Temperature :
-55°C~175°C TJ
JESD-609 Code :
e0
DS Breakdown Voltage-Min :
25V
Transistor Application :
SWITCHING
RoHS Status :
Non-RoHS Compliant
Current - Continuous Drain (Id) @ 25°C :
9.5A Ta 32A Tc
Gate Charge (Qg) (Max) @ Vgs :
16nC @ 5V
Terminal Position :
Single
Case Connection :
DRAIN
Drain Current-Max (Abs) (ID) :
32A
Terminal Form :
Gull wing
Surface Mount :
yes
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Elements :
1
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
235
Qualification Status :
COMMERCIAL
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
1.4pF @ 20V
Avalanche Energy Rating (Eas) :
71.7 mJ
Power Dissipation-Max :
1.3W Ta 50W Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
2V @ 250μA
Packaging :
Tube
Vgs (Max) :
±20V
Configuration :
SINGLE WITH BUILT-IN DIODE
Pbfree Code :
No
Pulsed Drain Current-Max (IDM) :
130A
Rds On (Max) @ Id, Vgs :
8.4m Ω @ 30A, 10V
Pin Count :
3
Drain to Source Voltage (Vdss) :
25V
Mounting Type :
Surface Mount
Number of Terminations :
2
Drain-source On Resistance-Max :
0.0146Ohm
JESD-30 Code :
R-PSSO-G2
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Datasheets
NTD65N03R
Introducing Transistors - FETs, MOSFETs - Single onsemi NTD65N03R from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Number of Terminations:2, NTD65N03R pinout, NTD65N03R datasheet PDF, NTD65N03R amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTD65N03R ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTD65N03R


N-Channel Tube 8.4m Ω @ 30A, 10V ±20V 1.4pF @ 20V 16nC @ 5V 25V TO-252-3, DPak (2 Leads + Tab), SC-63

NTD65N03R Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 71.7 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1.4pF @ 20V.There is no drain current on this device since the maximum continuous current it can conduct is 32A.There is a peak drain current of 130A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 25V, it should remain above the 25V level.The transistor must receive a 25V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

NTD65N03R Features


the avalanche energy rating (Eas) is 71.7 mJ
based on its rated peak drain current 130A.
a 25V drain to source voltage (Vdss)


NTD65N03R Applications


There are a lot of Rochester Electronics, LLC
NTD65N03R applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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