NTD6416ANLT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Length :

6.73mm

ECCN Code :

EAR99

Width :

6.22mm

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

19A

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.2V @ 250µA

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

2.2 V

Time@Peak Reflow Temperature-Max (s) :

40

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Terminations :

2

Case Connection :

DRAIN

Radiation Hardening :

No

Factory Lead Time :

5 Weeks

Surface Mount :

yes

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

4

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

50 mJ

Turn On Delay Time :

7 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

74mOhm

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Lead Free :

Lead Free

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 25V

Terminal Form :

Gull wing

Pin Count :

4

Power Dissipation :

71W

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Breakdown Voltage :

100V

Fall Time (Typ) :

40 ns

Rise Time :

16ns

Rds On (Max) @ Id, Vgs :

74m Ω @ 19A, 10V

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

70A

Power Dissipation-Max :

71W Tc

Height :

2.38mm

Terminal Finish :

Tin (Sn)

Published :

2009

Threshold Voltage :

2.2V

JESD-30 Code :

R-PDSO-G2

Turn-Off Delay Time :

35 ns