NTD6415ANT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Threshold Voltage :

4V

Continuous Drain Current (ID) :

23A

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Rise Time :

37ns

Turn On Delay Time :

10 ns

Resistance :

55mOhm

Number of Elements :

1

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

79 mJ

Operating Temperature :

-55°C~175°C TJ

Pbfree Code :

yes

Case Connection :

DRAIN

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Length :

6.73mm

Power Dissipation-Max :

83W Tc

Time@Peak Reflow Temperature-Max (s) :

40

Nominal Vgs :

4 V

Rds On (Max) @ Id, Vgs :

55m Ω @ 23A, 10V

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

100V

Peak Reflow Temperature (Cel) :

260

Pin Count :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Width :

6.22mm

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

83W

Mounting Type :

Surface Mount

Fall Time (Typ) :

37 ns

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Turn-Off Delay Time :

30 ns

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Published :

2009

Number of Pins :

4

JESD-30 Code :

R-PSSO-G2

Radiation Hardening :

No

Vgs (Max) :

±20V

Height :

2.38mm

Pulsed Drain Current-Max (IDM) :

89A