NTD6415ANT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

4V

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

10 ns

RoHS Status :

RoHS Compliant

Height :

2.38mm

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Number of Pins :

4

ECCN Code :

EAR99

Power Dissipation-Max :

83W Tc

Rds On (Max) @ Id, Vgs :

55m Ω @ 23A, 10V

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Transistor Element Material :

SILICON

Element Configuration :

Single

Surface Mount :

yes

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

100V

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

79 mJ

Power Dissipation :

83W

Pbfree Code :

yes

Number of Elements :

1

Turn-Off Delay Time :

30 ns

Pin Count :

4

Pulsed Drain Current-Max (IDM) :

89A

JESD-609 Code :

e3

Vgs (Max) :

±20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rise Time :

37ns

Width :

6.22mm

Lead Free :

Lead Free

Case Connection :

DRAIN

Published :

2009

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Radiation Hardening :

No

Continuous Drain Current (ID) :

23A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Nominal Vgs :

4 V

FET Type :

N-Channel

Fall Time (Typ) :

37 ns

Length :

6.73mm

Resistance :

55mOhm

Time@Peak Reflow Temperature-Max (s) :

40