NTA4153NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Radiation Hardening :

No

Turn-Off Delay Time :

25 ns

Drain to Source Breakdown Voltage :

20V

Voltage - Rated DC :

20V

Terminal Position :

Dual

ECCN Code :

EAR99

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Mounting Type :

Surface Mount

Length :

800μm

Input Capacitance (Ciss) (Max) @ Vds :

110pF @ 16V

Threshold Voltage :

760mV

REACH SVHC :

No SVHC

Power Dissipation-Max :

300mW Tj

Surface Mount :

yes

Vgs (Max) :

±6V

Continuous Drain Current (ID) :

915mA

Current - Continuous Drain (Id) @ 25°C :

915mA Ta

Number of Elements :

1

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Transistor Application :

SWITCHING

Turn On Delay Time :

3.7 ns

Rds On (Max) @ Id, Vgs :

230m Ω @ 600mA, 4.5V

Number of Terminations :

3

Pin Count :

3

Nominal Vgs :

760 mV

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Published :

2005

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Resistance :

127mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

4.4ns

Number of Pins :

3

Width :

1.6mm

Power Dissipation :

300mW

Element Configuration :

Single

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

6V

Height :

800μm

Factory Lead Time :

5 Weeks

Current Rating :

915mA

Package / Case :

SC-75, SOT-416

Fall Time (Typ) :

4.4 ns

Gate Charge (Qg) (Max) @ Vgs :

1.82nC @ 4.5V