NTA4153NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Current Rating :

915mA

Power Dissipation :

300mW

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Power Dissipation-Max :

300mW Tj

Terminal Finish :

Tin (Sn)

Factory Lead Time :

5 Weeks

Mounting Type :

Surface Mount

Pin Count :

3

FET Type :

N-Channel

Terminal Position :

Dual

Fall Time (Typ) :

4.4 ns

Nominal Vgs :

760 mV

Threshold Voltage :

760mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Rise Time :

4.4ns

Current - Continuous Drain (Id) @ 25°C :

915mA Ta

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Element Configuration :

Single

Height :

800μm

Number of Pins :

3

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

20V

Rds On (Max) @ Id, Vgs :

230m Ω @ 600mA, 4.5V

Continuous Drain Current (ID) :

915mA

Gate Charge (Qg) (Max) @ Vgs :

1.82nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Resistance :

127mOhm

Published :

2005

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

110pF @ 16V

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Width :

1.6mm

Voltage - Rated DC :

20V

Package / Case :

SC-75, SOT-416

Turn-Off Delay Time :

25 ns

JESD-609 Code :

e3

ECCN Code :

EAR99

Vgs (Max) :

±6V

Packaging :

Tape and Reel (TR)

Length :

800μm

Turn On Delay Time :

3.7 ns

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

6V

Surface Mount :

yes

Terminal Form :

Gull wing