NTA4151PT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

8 ns

REACH SVHC :

No SVHC

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

156pF @ 5V

Power Dissipation :

301mW

Rds On (Max) @ Id, Vgs :

360m Ω @ 350mA, 4.5V

Width :

900μm

Drain to Source Breakdown Voltage :

-20V

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

-20V

Drain Current-Max (Abs) (ID) :

0.76A

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

2.1nC @ 4.5V

ECCN Code :

EAR99

Published :

2005

FET Type :

P-Channel

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

450mV @ 250μA

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

6V

Package / Case :

SC-75, SOT-416

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Vgs (Max) :

±6V

JESD-609 Code :

e3

Number of Elements :

1

Height :

800μm

Rise Time :

8.2ns

Number of Pins :

3

Terminal Form :

Gull wing

Current Rating :

-760mA

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

301mW Tj

Length :

1.65mm

Current - Continuous Drain (Id) @ 25°C :

760mA Tj

Radiation Hardening :

No

Continuous Drain Current (ID) :

760mA

Factory Lead Time :

6 Weeks

Element Configuration :

Single

Threshold Voltage :

-450mV

Drain to Source Voltage (Vdss) :

20V

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

Fall Time (Typ) :

8.2 ns

Turn-Off Delay Time :

29 ns

Resistance :

260mOhm

Terminal Position :

Dual

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)