NTA4151PT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Factory Lead Time :

6 Weeks

Published :

2005

Gate to Source Voltage (Vgs) :

6V

Vgs (Max) :

±6V

Resistance :

260mOhm

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

-450mV

Operating Temperature :

-55°C~150°C TJ

Length :

1.65mm

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Pin Count :

3

ECCN Code :

EAR99

Number of Terminations :

3

Drain to Source Breakdown Voltage :

-20V

Surface Mount :

yes

Number of Elements :

1

JESD-609 Code :

e3

Turn On Delay Time :

8 ns

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

156pF @ 5V

Current Rating :

-760mA

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Radiation Hardening :

No

Fall Time (Typ) :

8.2 ns

Current - Continuous Drain (Id) @ 25°C :

760mA Tj

Rise Time :

8.2ns

Vgs(th) (Max) @ Id :

450mV @ 250μA

Power Dissipation :

301mW

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Drain Current-Max (Abs) (ID) :

0.76A

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Power Dissipation-Max :

301mW Tj

Continuous Drain Current (ID) :

760mA

Width :

900μm

Package / Case :

SC-75, SOT-416

Gate Charge (Qg) (Max) @ Vgs :

2.1nC @ 4.5V

Terminal Form :

Gull wing

Height :

800μm

Terminal Position :

Dual

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

360m Ω @ 350mA, 4.5V

Turn-Off Delay Time :

29 ns

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

20V

Voltage - Rated DC :

-20V

Terminal Finish :

Tin (Sn)