NTA4001NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

13 ns

Rise Time :

15ns

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2005

Element Configuration :

Single

Number of Terminations :

3

FET Type :

N-Channel

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Resistance :

1.5Ohm

Package / Case :

SC-75, SOT-416

Fall Time (Typ) :

15 ns

Power Dissipation-Max :

300mW Tj

Pbfree Code :

yes

Threshold Voltage :

1V

Gate to Source Voltage (Vgs) :

10V

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

238mA

Vgs(th) (Max) @ Id :

1.5V @ 100μA

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Rds On (Max) @ Id, Vgs :

3 Ω @ 10mA, 4.5V

Height :

800μm

Factory Lead Time :

12 Weeks

Drain to Source Breakdown Voltage :

20V

Feedback Cap-Max (Crss) :

6 pF

Current Rating :

238mA

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

238mA Tj

Terminal Position :

Dual

Length :

1.6256mm

Input Capacitance (Ciss) (Max) @ Vds :

20pF @ 5V

Nominal Vgs :

1 V

Radiation Hardening :

No

Pin Count :

3

Surface Mount :

yes

Voltage - Rated DC :

20V

RoHS Status :

ROHS3 Compliant

Width :

900μm

Mounting Type :

Surface Mount

Vgs (Max) :

±10V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Turn-Off Delay Time :

98 ns

Number of Pins :

3

ECCN Code :

EAR99

Contact Plating :

Tin

Power Dissipation :

300mW

JESD-609 Code :

e3