NSVMUN5312DW1T2G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Factory Lead Time :

8 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature (Min) :

-55°C

JESD-30 Code :

R-PDSO-G6

Resistor - Base (R1) :

22k Ω

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Package / Case :

6-TSSOP, SC-88, SOT-363

Terminal Finish :

Tin (Sn)

Mount :

Surface Mount

Transistor Application :

SWITCHING

Max Power Dissipation :

250mW

JESD-609 Code :

e3

Published :

2014

Number of Elements :

2

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Collector Emitter Breakdown Voltage :

50V

Max Collector Current :

100mA

Polarity/Channel Type :

NPN AND PNP

Collector Emitter Voltage (VCEO) :

250mV

Current - Collector Cutoff (Max) :

500nA

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Number of Terminations :

6

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Operating Temperature (Max) :

150°C

Resistor - Emitter Base (R2) :

22k Ω

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

250mW

Reference Standard :

AEC-Q101