NSVMUN2132T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Current-Max (IC) :

0.1 A

Surface Mount :

yes

Continuous Collector Current :

100

DC Current Gain-Min (hFE) :

15

Number of Terminals :

3

Resistor - Emitter Base (R2) :

4.7 kOhms

Terminal Finish :

Tin (Sn)

VCEsat-Max :

0.25 V

Pbfree Code :

yes

Package Shape :

RECTANGULAR

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Power - Max :

230 mW

Transistor Element Material :

SILICON

Transistor Type :

PNP - Pre-Biased

Series :

-

Package :

Bulk

Manufacturer :

ON Semiconductor

Reach Compliance Code :

Compliant

Collector-Emitter Voltage-Max :

50 V

Brand Name :

ON Semiconductor

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Resistor - Base (R1) :

4.7 kOhms

JESD-609 Code :

e3

JESD-30 Code :

R-PDSO-G3

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Reference Standard :

AEC-Q101

Transistor Polarity :

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 5mA, 10V

Polarity/Channel Type :

PNP

Power Dissipation :

338

Mounting Type :

Surface Mount

Supplier Device Package :

SC-59

Number of Elements :

1

Current - Collector (Ic) (Max) :

100 mA

Product Status :

Obsolete

Power Dissipation-Max (Abs) :

0.338 W

Voltage - Collector Emitter Breakdown (Max) :

50 V

Terminal Position :

Dual

Current - Collector Cutoff (Max) :

500nA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Application :

SWITCHING

Terminal Form :

Gull wing