NSVMMBT6520LT1G
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- Mfr.Part #
- NSVMMBT6520LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 350V 0.5A SOT23-3
- Stock
- 1,292
- In Stock ：
- 1,292
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 50mA 10V
- Number of Terminations :
- 3
- hFE Min :
- 30
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 300mW
- Number of Pins :
- 3
- Number of Elements :
- 1
- Max Collector Current :
- 500mA
- Lead Free :
- Lead Free
- Transition Frequency :
- 40MHz
- Collector Base Voltage (VCBO) :
- 350V
- Mount :
- Surface Mount
- Current - Collector (Ic) (Max) :
- 500mA
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 350V
- Collector Emitter Voltage (VCEO) :
- 350V
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Surface Mount
- Frequency :
- 200MHz
- Factory Lead Time :
- 8 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5mA, 50mA
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Radiation Hardening :
- No
- Max Power Dissipation :
- 225mW
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Published :
- 2006
- Datasheets
- NSVMMBT6520LT1G
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSVMMBT6520LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 50mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 40MHz.During maximum operation, collector current can be as low as 500mA volts.
NSVMMBT6520LT1G Features
the DC current gain for this device is 20 @ 50mA 10V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 40MHz
NSVMMBT6520LT1G Applications
There are a lot of ON Semiconductor
NSVMMBT6520LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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