NSVMMBT6429LT1G
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- Mfr.Part #
- NSVMMBT6429LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.2A SOT23-3
- Stock
- 2,850
- In Stock ：
- 2,850
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 300mW
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 45V
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 100μA 5V
- Current - Collector (Ic) (Max) :
- 200mA
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 300mW
- Transition Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Finish :
- Tin (Sn)
- Configuration :
- Single
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Factory Lead Time :
- 2 Weeks
- Surface Mount :
- yes
- Current - Collector Cutoff (Max) :
- 100nA
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Max Collector Current :
- 200mA
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- Radiation Hardening :
- No
- Frequency :
- 700MHz
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 45V
- Published :
- 2009
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Number of Elements :
- 1
- Halogen Free :
- Halogen Free
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 55V
- Datasheets
- NSVMMBT6429LT1G
NPN -55°C~150°C TJ 100nA 1 Elements NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSVMMBT6429LT1G Overview
This device has a DC current gain of 500 @ 100μA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 100MHz.The maximum collector current is 200mA volts.
NSVMMBT6429LT1G Features
the DC current gain for this device is 500 @ 100μA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
NSVMMBT6429LT1G Applications
There are a lot of ON Semiconductor
NSVMMBT6429LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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