NSVMMBT5551M3T5G
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- Mfr.Part #
- NSVMMBT5551M3T5G
- Manufacturer
- onsemi
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.06A SOT723
- Stock
- 1,956
- In Stock ：
- 1,956
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Published :
- 2009
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Factory Lead Time :
- 8 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- Max Power Dissipation :
- 265mW
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Series :
- Automotive, AEC-Q101
- Terminal Form :
- Flat
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- JESD-30 Code :
- R-PDSO-F3
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Max Collector Current :
- 60mA
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Collector Emitter Breakdown Voltage :
- 160V
- Configuration :
- Single
- Power - Max :
- 265mW
- Collector Emitter Voltage (VCEO) :
- 200mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- SOT-723
- Datasheets
- NSVMMBT5551M3T5G
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-723 Tape & Reel (TR) Surface Mount
NSVMMBT5551M3T5G Overview
In this device, the DC current gain is 80 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 5mA, 50mA.Maximum collector currents can be below 60mA volts.
NSVMMBT5551M3T5G Features
the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
NSVMMBT5551M3T5G Applications
There are a lot of ON Semiconductor
NSVMMBT5551M3T5G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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