NSVMMBT5401WT1G
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- Mfr.Part #
- NSVMMBT5401WT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 150V 0.5A SC70-3
- Stock
- 25,625
- In Stock ：
- 25,625
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 500mA
- Terminal Position :
- Dual
- Max Power Dissipation :
- 400mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Frequency - Transition :
- 300MHz
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Factory Lead Time :
- 4 Weeks
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Series :
- Automotive, AEC-Q101
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Transition Frequency :
- 100MHz
- Power - Max :
- 400mW
- Collector Emitter Voltage (VCEO) :
- 500mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Package / Case :
- SC-70, SOT-323
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 160V
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- Mounting Type :
- Surface Mount
- Published :
- 2012
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 150V
- Datasheets
- NSVMMBT5401WT1G
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
NSVMMBT5401WT1G Overview
This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 100MHz.The maximum collector current is 500mA volts.
NSVMMBT5401WT1G Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
NSVMMBT5401WT1G Applications
There are a lot of ON Semiconductor
NSVMMBT5401WT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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