NSVMMBT5401LT3G
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- Mfr.Part #
- NSVMMBT5401LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 150V 0.5A SOT23-3
- Stock
- 19,867
- In Stock ：
- 19,867
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 225mW
- hFE Min :
- 60
- Continuous Collector Current :
- -500mA
- Collector Base Voltage (VCBO) :
- -160V
- Gain Bandwidth Product :
- 300MHz
- Transition Frequency :
- 100MHz
- Reference Standard :
- AEC-Q101
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 4 Weeks
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- -500mV
- Max Collector Current :
- 500mA
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 500mV
- Current - Collector (Ic) (Max) :
- 500mA
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 150V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 6 hours ago)
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Terminal Finish :
- Tin (Sn)
- Published :
- 2014
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- NSVMMBT5401LT3G
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSVMMBT5401LT3G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 10mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 5mA, 50mA.Continuous collector voltages of -500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 500mA volts.
NSVMMBT5401LT3G Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
NSVMMBT5401LT3G Applications
There are a lot of ON Semiconductor
NSVMMBT5401LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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