NSVBC124EPDXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

Polarity/Channel Type :

NPN AND PNP

Power - Max :

339mW

Operating Temperature (Max) :

150°C

Current - Collector (Ic) (Max) :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature (Min) :

-55°C

Factory Lead Time :

17 Weeks

Series :

Automotive, AEC-Q101

Published :

2016

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Package / Case :

SOT-563, SOT-666

Voltage - Collector Emitter Breakdown (Max) :

50V

Resistor - Base (R1) :

22k Ω

Mounting Type :

Surface Mount

Number of Terminations :

6

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Terminal Form :

Flat

JESD-30 Code :

R-PDSO-F6

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Resistor - Emitter Base (R2) :

22k Ω

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

500nA

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Number of Elements :

2