NSTB1002DXV5T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Max Collector Current :

200mA

Length :

1.7mm

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA / 400mV @ 5mA, 50mA

Number of Pins :

5

Pin Count :

5

Collector Emitter Voltage (VCEO) :

250mV

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V / 100 @ 1mA 10V

Height :

600μm

Configuration :

CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR

Number of Terminations :

5

Packaging :

Tape and Reel (TR)

Continuous Collector Current :

-200mA

Transition Frequency :

250MHz

Current Rating :

100mA

Number of Elements :

2

Max Power Dissipation :

500mW

Terminal Position :

Dual

Power Dissipation :

357mW

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Polarity :

NPN, PNP

Package / Case :

SOT-553

Min Operating Temperature :

-55°C

Terminal Finish :

Tin (Sn)

Max Operating Temperature :

150°C

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Collector Emitter Saturation Voltage :

250mV

hFE Min :

250

Lead Free :

Lead Free

Voltage - Collector Emitter Breakdown (Max) :

50V 40V

Current - Collector Cutoff (Max) :

500nA

Turn Off Time-Max (toff) :

300ns

Current - Collector (Ic) (Max) :

100mA 200mA

Resistor - Base (R1) :

47k Ω

Qualification Status :

Not Qualified

Width :

1.3mm

Surface Mount :

yes

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

ECCN Code :

EAR99

Frequency - Transition :

250MHz

Terminal Form :

Flat

Transistor Application :

SWITCHING

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Factory Lead Time :

17 Weeks

Published :

2006

Resistor - Emitter Base (R2) :

47k Ω

Collector Emitter Breakdown Voltage :

40V

Emitter Base Voltage (VEBO) :

6V

Pbfree Code :

yes

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn On Time-Max (ton) :

70ns