NSM46211DW6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Resistor - Emitter Base (R2) :

10k Ω

Transistor Application :

SWITCHING

Transistor Type :

1 NPN Pre-Biased, 1 NPN

Number of Terminations :

6

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

HTS Code :

8541.21.00.95

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA / 600mV @ 5mA, 100mA

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Polarity/Channel Type :

NPN

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V / 200 @ 2mA 5V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

RoHS Status :

RoHS Compliant

Power - Max :

230mW

Max Collector Current :

100mA

Number of Elements :

2

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Lead Free

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

65V

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

500nA

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Max Power Dissipation :

230mW

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1.0

Published :

2008

Package / Case :

6-TSSOP, SC-88, SOT-363

Number of Pins :

6

Voltage - Collector Emitter Breakdown (Max) :

50V 65V

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

250mV

Resistor - Base (R1) :

10k Ω

Pin Count :

6