NSBA124EDXV6T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Polarity :

PNP

Published :

2009

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

Current - Collector Cutoff (Max) :

500nA

Element Configuration :

Dual

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Number of Terminations :

6

Max Collector Current :

100mA

Base Part Number :

NSBA1*

Resistor - Base (R1) :

22k Ω

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Terminal Form :

Flat

Collector Emitter Breakdown Voltage :

50V

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

250mV

Min Operating Temperature :

-55°C

hFE Min :

60

Max Operating Temperature :

150°C

Pin Count :

6

Mount :

Surface Mount

Transistor Type :

2 PNP - Pre-Biased (Dual)

Continuous Collector Current :

-100mA

Resistor - Emitter Base (R2) :

22k Ω

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PDSO-F6

Max Power Dissipation :

500mW

Lead Free :

Contains Lead

Terminal Finish :

Tin (Sn)

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Current Rating :

-100mA

Power Dissipation :

357mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

-50V

Package / Case :

SOT-563, SOT-666

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1