NSBA123JDXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Collector Current :

100mA

Continuous Collector Current :

-100mA

Current Rating :

-100mA

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Number of Terminations :

6

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

50V

Number of Elements :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Terminal Finish :

Tin (Sn)

Number of Pins :

6

Collector Emitter Voltage (VCEO) :

250mV

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 0.047

Resistor - Emitter Base (R2) :

47k Ω

Polarity :

PNP

Lead Free :

Lead Free

Element Configuration :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

Mount :

Surface Mount

Current - Collector Cutoff (Max) :

500nA

Max Power Dissipation :

500mW

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Published :

2007

Terminal Form :

Flat

hFE Min :

80

Package / Case :

SOT-563, SOT-666

Mounting Type :

Surface Mount

Resistor - Base (R1) :

2.2k Ω

Max Breakdown Voltage :

50V

Base Part Number :

NSBA1*

Pin Count :

6

Voltage - Rated DC :

-50V

Transistor Type :

2 PNP - Pre-Biased (Dual)

Power Dissipation :

357mW