NP90N06VLG-E1-AY
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- Mfr.Part #
- NP90N06VLG-E1-AY
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 90A TO252
- Stock
- 15,113
- In Stock ：
- 15,113
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 7.8m Ω @ 45A, 10V
- Terminal Position :
- Single
- Drain to Source Voltage (Vdss) :
- 60V
- Number of Terminations :
- 2
- Power Dissipation :
- 1.2W
- DS Breakdown Voltage-Min :
- 60V
- Rise Time :
- 13ns
- Turn On Delay Time :
- 17 ns
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Gate Charge (Qg) (Max) @ Vgs :
- 135nC @ 10V
- Turn-Off Delay Time :
- 76 ns
- Power Dissipation-Max :
- 1.2W Ta 105W Tc
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 90A
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- Gull wing
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- JESD-30 Code :
- R-PSSO-G2
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Published :
- 2007
- Vgs (Max) :
- ±20V
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 6900pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Drain-source On Resistance-Max :
- 0.0078Ohm
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 7 ns
- Radiation Hardening :
- No
- Operating Temperature :
- 175°C TJ
- Datasheets
- NP90N06VLG-E1-AY
N-Channel Tape & Reel (TR) 7.8m Ω @ 45A, 10V ±20V 6900pF @ 25V 135nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
NP90N06VLG-E1-AY Overview
A device's maximum input capacitance is 6900pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 90A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 76 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 17 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 60V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
NP90N06VLG-E1-AY Features
a continuous drain current (ID) of 90A
the turn-off delay time is 76 ns
a 60V drain to source voltage (Vdss)
NP90N06VLG-E1-AY Applications
There are a lot of Renesas Electronics America
NP90N06VLG-E1-AY applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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