NP90N04VDG-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

4mOhm @ 45A, 10V

Rds On Max :

4 mΩ

Max Operating Temperature :

175 °C

Power Dissipation (Max) :

1.2W (Ta), 105W (Tc)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

135 nC @ 10 V

FET Feature :

-

Rise Time :

13 ns

Drain to Source Voltage (Vdss) :

40 V

Input Capacitance (Ciss) (Max) @ Vds :

6900 pF @ 25 V

Packaging :

Tape and Reel

Continuous Drain Current (ID) :

90 A

Power Dissipation :

105

Mounting Type :

Surface Mount

Turn-Off Delay Time :

74 ns

Input Capacitance :

6.9 nF

RoHS :

Compliant

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Continuous Drain Current Id :

90

Operating Temperature :

175°C (TJ)

Mount :

Surface Mount

Product Status :

Obsolete

Number of Elements :

1

Supplier Device Package :

TO-252

Gate to Source Voltage (Vgs) :

20 V

Series :

-

Turn-On Delay Time :

17 ns

Package :

Bulk

FET Type :

N-Channel

Max Power Dissipation :

1.2 W

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

90A (Tc)

Min Operating Temperature :

-55 °C

Channel Type :

N

Technology :

MOSFET (Metal Oxide)